Semiconductor device and process for producing the same

ABSTRACT

The thickness of a tape carrier package having a semiconductor chip is made uniform where bonding pads are concentrated on one side of the semiconductor chip. The tape carrier package is such that dummy pads  6   b  are arranged on one side opposite to the side on which bonding pads (effective pins)  6   a  are arranged in the semiconductor chip. Dummy leads  5  are formed on an insulating tape  4.  The semiconductor chip is supported with inner lead portions  5   a  connected to the corresponding bonding pads  6   a  and the inner lead portions  5   a  of the dummy leads  5  connected to the corresponding dummy pads  6   b.

This is a divisional application of U.S. Ser. No. 09/545,463, filed Apr.7, 2000, which is a divisional application of U.S. Ser. No. 09/007,079,filed Jan. 14, 1998, now U.S. Pat. No. 6,060,770.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor device and a processfor producing the same, and more particularly to a technologyeffectively applicable to the manufacture of a semiconductor devicehaving a tape carrier package (called the TCP).

A TCP, a TSOP (Thin Small Outline Package), a TSOJ (Thin Small OutlineJ-Lead Package) and a TQFP (Thin Quad Flat Package) are well known asLSI packages with which thin semiconductor devices such as IC cards aremounted. Above all, the TCP formed by mounting a semiconductor chip on athin tape made of insulating material such as polyimide is usable forrealizing an extra-thin LSI package because the thickness of resin withwhich the semiconductor chip in encapsulated is reducible.

A process for making such a TCP comprises the steps of placing asemiconductor chip in a device hole of an insulating tape with leadsformed on one side, bonding one end portion (inner lead portion) of eachlead to a bump electrode which is pre-formed on the major surface(element-forming side) of the semiconductor chip to electrically connectthe lead and the semiconductor chip, encapsulating the semiconductorchip with resin by curing the potting resin applied onto the majorsurface of the semiconductor chip, cutting away the unnecessary portionof the insulating tape and the leads so that the other end portion(outer lead portion) of each lead can be mounted on a substrate.

Japanese Patent Laid-Open No. 57248/1991, for example, describes such aTPC.

SUMMARY OF THE INVENTION

In the aforementioned TCP, one end portion of each lead is connected viaa bump electrode of Au onto the bonding pad of a semiconductor chip.

In the case of a semiconductor chip forming a logic LSI having a numberof external connecting terminals (pins), bonding pads with bumpelectrodes to be respectively formed thereon are ordinarily disposedalong the four sides of the chip. In the case of a memory LSI in whichthe number of pins is relatively small, however, bonding pads aredisposed along one side or in the central portion of a chip. A method ofconcentratingly arranging the bonding pads along one side of the chip iscalled a one-side pad arrangement system, which is advantageous in thatthe chip size is reducible.

Nevertheless, there arises the following problem if a semiconductor chipemploying the one-side pad arrangement system is packaged in the TCP.

When each lead is connected via the bump electrode onto the bonding padof the semiconductor chip of the one-side pad arrangement system, theapplication of a potting resin onto the semiconductor chip in such astate that the semiconductor chip is supported in the device hole of aninsulating tape only by the leads connected to the respective bondingpads disposed on one side thereof causes the semiconductor chip to tiltbecause of the weight of the resin. When the potting resin is cured, thepackaging of TCP cannot be uniformized because part of the filmthickness is undesirably increased.

In this case when the potting resin is applied onto the semiconductorchip in such a state that it is placed on, for example, a horizontalstage in order to prevent the semiconductor chip from being tilted(displaced) in this case, the potting resin passed through the gapbetween the insulating tape and the semiconductor chip tends to stick tothe back of the semiconductor chip and the surface of the stage. Inconsequence, workability at the step of encapsulation with resin isextremely lowered.

An object of the present invention is to provide a technology of makinguniform the thickness of a TCP in use in packaging a semiconductor chipof a one-side pad arrangement system.

Another object of the present invention is to provide a technology ofimproving the workability of assembling a TCP for use in packaging asemiconductor chip of a one-side pad arrangement system.

These and other objects and novel features of the invention may bereadily ascertained by referring to the following description andappended drawings.

A brief description will be given of the representatives of theinventions disclosed in the present patent application.

(1) A semiconductor device according to the present invention comprisinga tape carrier package in which a semiconductor chip is placed in thedevice hole of an insulating tape which is formed with a plurality ofleads on the major surface of the semiconductor chip; one ends of theleads are electrically connected onto a plurality of bonding pads whichare disposed in an uneven manner in a predetermined area of the majorsurface of the semiconductor chip; and the major surface of thesemiconductor chip and one ends of the leads are at least encapsulatedwith resin, is characterized in that dummy bonding pads in anelectrically floating state are disposed in an area different from thearea where the bonding pads on the major surface of the semiconductorchip are disposed; and one ends portion of dummy leads which are formedon one side of the insulating tape are connected onto the correspondingdummy bonding pads.

(2) A semiconductor device according to the present invention in whichthe plurality of the bonding pads are disposed along one side of thesemiconductor chip; and the bonding pads are disposed along the otheropposed side of the semiconductor chip.

(3) A semiconductor device according to the present invention in whichsome dummy leads extending to the portion over the gap between thesemiconductor chip and the insulating tape are disposed in an area alongone side opposite to the one side where the bonding pads of thesemiconductor chip are disposed.

(4) A semiconductor device according to the present invention in whichsome dummy leads extending to the portion over the gap between thesemiconductor chip and the insulating tape are disposed in areas alongthree sides other than the other side where the bonding pads of thesemiconductor chip are disposed.

(5) A semiconductor device according to the present invention in whichthe plurality of the bonding pads are disposed in areas along the threesides of the semiconductor chip; and the dummy bonding pads are disposedin an area along the other side of the semiconductor chip.

(6) A semiconductor device according to the present invention in whichthe other ends of the leads electrically connected to the bonding padsare extended outside the resin for encapsulating the semiconductor chipso that the other ends of the leads are capable of being packaged.

(7) A semiconductor device according to the present invention in whichthe other ends of the dummy leads are extended outside the resin forencapsulating the semiconductor chip so that the other ends of the leadsare capable of being packaged.

(8) A semiconductor device according to the present invention in whichthe tape carrier package is mounted on a printed wiring board.

(9) A semiconductor device according to the present invention in which aplurality of the tape carrier packages are stacked on a printed wiringboard.

(10) A semiconductor device according to the present invention in whicha protective frame is provided around the insulating tape.

(11) A semiconductor device according to the present invention in whichthe semiconductor chip is encapsulated with bonding resin.

(12) A semiconductor device according to the present invention in whicha flash memory is formed on the major surface of the semiconductor chip.

(13) A semiconductor device according to the present invention in whichthe plurality of the bonding pads are disposed in the substantiallycentral portion of the major surface of the semiconductor chip.

(14) A semiconductor device according to the present invention in whichan IC card is loaded with a printed wiring board on which thesemiconductor device is mounted.

(15) A process for producing a semiconductor device of the presentinvention comprises the steps of:

(a) preparing an insulating tape having at least a plurality of leadsincluding dummy leads which are formed on its major surface, and asemiconductor chip having a plurality of bonding pads which are disposedin an uneven manner in a predetermined area on its major surface anddummy bonding pads in an electrically floating state which are disposedin an area different from the area where the bonding pads are disposed;

(b) placing the semiconductor chip in the device hole of the insulatingtape, electrically connecting one end portions of the leads to thecorresponding bonding pads and connecting one end portions of the dummyleads to the corresponding dummy bonding pads; and

(c) at least encapsulating the major surface of the semiconductor chipand one end portions of the leads with resin.

(16) A process for producing a semiconductor device according to thepresent invention in which the semiconductor chip is encapsulated bycuring the potting resin deposited on the major surface of thesemiconductor chip.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of a semiconductor device of Embodiment 1according to the present invention.

FIG. 2 is a sectional view taken on line II-II′ of FIG. 1.

FIG. 3 is an enlarged plan view of a semiconductor chip packaged in thesemiconductor device of Embodiment 1 according to the present invention.

FIG. 4 is a plan view showing an arrangement of leads in thesemiconductor device of Embodiment 1 according to the present invention.

FIG. 5 is a perspective view showing a process for producing thesemiconductor device of Embodiment 1 according to the present invention.

FIG. 6 is a perspective view showing a process for producing thesemiconductor device of Embodiment 1 according to the present invention.

FIG. 7 is a sectional view showing a process for producing thesemiconductor device of Embodiment 1 according to the present invention.

FIG. 8 is a perspective view showing a process for producing thesemiconductor device of Embodiment 1 according to the present invention.

FIG. 9 is a sectional view showing a process for producing thesemiconductor device of Embodiment 1 according to the present invention.

FIG. 10 is a sectional view showing a process for producing thesemiconductor device of Embodiment 1 according to the present invention.

FIG. 11 is a sectional view showing a process for producing thesemiconductor device of Embodiment 1 according to the present invention.

FIG. 12 is a sectional view showing a process for producing thesemiconductor device of Embodiment 1 according to the present invention.

FIG. 13 is a sectional view showing a process for producing thesemiconductor device of Embodiment 1 according to the present invention.

FIG. 14 is a sectional view showing a process for producing thesemiconductor device of Embodiment 1 according to the present invention.

FIG. 15 is a sectional view showing a process for producing thesemiconductor device of Embodiment 1 according to the present invention.

FIG. 16 is a sectional view showing a state in which the semiconductordevice is mounted on a printed wiring board of Embodiment 1 according tothe present invention.

FIG. 17 is a sectional view showing a state in which the semiconductordevice is mounted on a printed wiring board of Embodiment 1 according tothe present invention.

FIG. 18 is a perspective view of the semiconductor device of Embodiment1 according to the present invention.

FIG. 19 is a perspective view of the semiconductor device of Embodiment1 according to the present invention.

FIG. 20 is a plan view of the semiconductor device of Embodiment 1according to the present invention.

FIG. 21 is a plan view of the semiconductor device of Embodiment 1according to the present invention.

FIG. 22 is a plan view of the semiconductor device of Embodiment 1according to the present invention.

FIG. 23 is a plan view of the semiconductor device of Embodiment 1according to the present invention.

FIG. 24 is a plan view of the semiconductor device of Embodiment 1according to the present invention.

FIG. 25 is a plan view of the semiconductor device of Embodiment 1according to the present invention.

FIG. 26 is a plan view of a semiconductor device of Embodiment 2according to the present invention.

FIG. 27 is a sectional view showing a process for producing thesemiconductor device of Embodiment 2 according to the present invention.

FIG. 28 is a plan view of the semiconductor device of Embodiment 2according to the present invention.

FIG. 29 is a plan view of an IC card in which the semiconductor deviceis loaded according to the present invention.

FIG. 30 is a plan view of the IC card in which the semiconductor deviceis loaded according to the present invention.

FIG. 31 is a sectional view of the IC card in which the semiconductordevice is loaded according to the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

A detailed description of embodiments of the preferred present inventionwill now be described in conjunction with the drawings.

Embodiment 1

FIG. 1 is a plan view of a semiconductor device (TCP) of this embodimentaccording to the present invention, and FIG. 2 is a sectional view takenon line II—II of FIG. 1. Incidentally, the illustration of part of theresin for encapsulating a semiconductor chip is omitted in order to makethe internal structure of the package easily understandable.

A TCP 1A of this embodiment according to the present invention comprisesa semiconductor chip 2 of single crystal silicon having a rectangularplane shape, a potting resin 3 for encapsulating the major surface(element forming surface) and side faces of the semiconductor chip 2,and a plurality of leads 5 formed on one side of an insulating tape 4,one end portion (inner lead portion 5 a) of each lead 5 and thesemiconductor chip 2 being electrically connected via a bump electrode 7of Au (gold) formed on the bonding pad 6 a on the major surface of thesemiconductor chip 2.

The potting resin 3 is epoxy resin, for example, and the insulating tape4 is made of polyimide, for example. The lead 5 is formed of Cu foil andits surface of the inner lead portion 5 a is plated with Au/Ni, Sn orsolder, for example. Further, the other end portion (outer lead portion5 b) of the lead 5 forming the external connection terminal of the TCP1A is in the form of a gull wing and its surface is also plated withAu/Ni, Sn, solder or the like.

FIG. 3 is an enlarged plan view of the major surface of theabove-described semiconductor chip 2. As shown in FIG. 3, circuitportions 25 are disposed on the major surface of the semiconductor chip2, a memory array and a peripheral circuit of, for example, a flashmemory being formed in the circuit portion. In the peripheral area ofthe chip adjacent to the circuit portions 25 are a redundancy circuit26, power supply wiring 27 for supplying operating voltage to thecircuit portions, and a plurality of bonding pads (effective pins) 6 aelectrically connected to the circuit portions via the internal wiring28. The circuit portions 25 occupy the most portion of the major surfaceof the semiconductor chip 2 excluding those in which the bonding pads 6a are formed. The bonding pads 6 a including signal pads used forinput-output signals, control signals and the like, and power supplypads connected to the power supply wiring 27. The bonding pads 6 a forsupplying power are provided in both side end portions of the chip, forexample.

The plurality of bonding pads 6 a are arranged in a row along one (theleft-hand side of FIG. 3) of the long sides opposite to each other onthe semiconductor chip 2. In other words, a so-called one-side padarranging system for locally arranging the bonding pads 6 a along theone side is employed for the semiconductor chip 2. The one-side padarranging system is advantageous in that the chip size is reducible incomparison with a method of arranging bonding pads 6 a along two sidesor four sides of such a semiconductor chip 2.

Bonding pads (dummy pads) 6 b in a floating state are arranged in therespective corner portions of the other long side (the right-hand sideof FIG. 3) of the semiconductor chip 2. These dummy pads 6 b areintended to prevent the insulating tape 4 from positionally shiftingfrom the semiconductor chip 2 during the process of producing the TCP 1Aas will be described later.

FIG. 4 is a plan view showing an arrangement of leads 5 corresponding tothe bonding pads (effective pins) 6 a and the dummy pad 6 b. Althoughthe same number of leads 5 is disposed on both two long sides of thesemiconductor chip 2, the leads 5 disposed on the long side with thedummy pads 6 b are dummy leads which do not function as the externalconnection terminals of the TCP 1A. Of these dummy leads 5, each of theleads 5 near the dummy pads 6 b is provided with the inner lead portion5 a and its leading end is bonded to the dummy pad 6 b and used tosupport the semiconductor chip 2. The other dummy leads 5 areconstituted of not the inner lead portions 5 a but only the outer leadportions 5 b, respectively. The outer lead portions 5 b of these dummyleads 5 are, as will be described later, used as support members forstably mounting the TCP 1A on the printed wiring board.

A description will subsequently be given of a process for producing theTCP 1A of this embodiment according to the present invention withreference to FIGS. 5-15.

In order to manufacture the TCP 1A, the insulating tape 4 shown in FIG.5 and the semiconductor chip 2 shown in FIG. 6 are prepared.

The insulating tape 4 is made of polyimide about 50 μm thick and has arectangular device hole 8 where the semiconductor chip 2 is placed. Inthe areas along the two long sides of the device hole 8, the leads 5formed by etching thin Cu foil that is bonded onto one side of theinsulating tape 4 and their inner lead portions 5 a are extended intothe device hole 8. The insulating tape 4 is actually a long tape about10 meters long, only part of the tape (equivalent to three TCPs) isshown in FIG. 5.

The bump electrodes 7 are formed on the bonding pads 6 a and dummy pads6 b of the semiconductor chip 2 before the TCP 1A is assembled. In orderto form the bump electrode 7, a wire bonding tool, for example, is usedto bond an Au ball on the bonding pad 6 a and the dummy pad 6 b and thenthe surface of each Au ball is flattened by means of a pressure-bondingtool.

Subsequently, the semiconductor chip 2 is, as shown in FIG. 7, placed onthe stage 11 of an inner lead bonding tool 10 and heated at about 100°C. and after the inner lead portions 5 a are respectively made oppositeto the bump electrodes 7 by positioning the device hole 8 of theinsulating tape 4 right above the semiconductor chip 2, a bonding tool12 which is heated to about 500° C. is brought into pressure contactwith the inner lead portions 5 a for about one second, whereby as shownin FIG. 8, the inner lead portions 5 a of all leads 5 are allsimultaneously bonded onto the corresponding bonding pads 6 a (or thedummy pads 6 b).

As shown in FIG. 9, further, a dispenser 13 is used to apply the pottingresin 3 diluted with thinner to the major surface of the semiconductorchip 2. Part of the potting resin 3 applied to the major surface of thesemiconductor chip 2 is passed through the gap between the insulatingtape 4 and the semiconductor chip 2 before being deposited on the sidefaces of the semiconductor chip 2. Thus, the major surface and sidefaces of the semiconductor chip 2 are encapsulated with the pottingresin 3 as shown in FIG. 10 by curing the potting resin 3 through headtreatment.

In a case where the semiconductor chip 2 is not provided with the dummypads 6 b when the semiconductor chip 2 is encapsulated with resinthrough the above-described steps according to the one-side padarranging system in which the bonding pads 6 a (effective pins) 6 a arelocalized on one side, the semiconductor chip 2 is, as shown in FIG. 11,supported by only the inner lead portions 5 a of the leads 5 connectedto the respective bonding pads 6 a (effective pins). When the pottingresin 3 is applied to the semiconductor chip 2 like this, thesemiconductor chip 2 is caused to tilt because of the weight of theresin as shown in FIG. 12 and as shown in FIG. 13, part of the filmbecomes undesirably thickened, which results in that it is impossible touniformize the thickness of the TCP 1A.

When the potting resin 3 is applied to the semiconductor chip 2 placedon the horizontal stage in order to prevent the semiconductor chip 2from being tilted (displaced) in this case, the potting resin 3 passedthrough the gap between the insulating tape 4 and the semiconductor chip2 sticks to the undersurface of the semiconductor chip 2 and the surfaceof the stage, thus extremely lowering the workability at theresin-encapsulating step.

In the case of the TCP 1A of this embodiment according to the presentinvention wherein the dummy pads 6 b are disposed on the side oppositeto the side on which the bonding pads 6 a (effective pins) are disposedand the semiconductor chip 2 is supported by the inner lead portions 5 aconnected to the respective bonding pads 6 a (effective pins) and theinner lead portions 5 a connected to the respective dummy pads 6 b toensure that the semiconductor chip 2 is prevented from being tilted(displaced) at the resin-encapsulating step, variation in the packagethickness are obviated and the yield of the TCP 1A is made improvablethereby. Thus, the semiconductor chip of the one-side pad arrangingsystem that has been difficult to package in the TCP can easily bepackaged therein, so that a range of semiconductor products employingTCPs is widened.

Thereafter by cutting/removing unnecessary portions of the insulatingtape 4 and the leads 5, and shaping the outer lead portions 5 b of theleads 5, the TCP 1A shown in FIGS. 1 and 2 is completed. The outer leadportions 5 b are bent toward the major surface side of the semiconductorchip 2 as shown in FIG. 2 or toward the undersurface side thereof asshown in FIG. 15.

In order to mount the TCP 1A, the outer lead portions 5 b of the leads 5are positioned on the respective electrodes 15 of a printed wiring board14. Solder is supplied by plating or pasting onto each electrode 15beforehand. Then the outer lead portions 5 b and the electrodes 15 areelectrically connected by reflowing the solder in a heating furnace.

Since all the leads 5 including the dummy leads are provided with theouter lead portions 5 b, the TCP 1A of this embodiment according to thepresent invention can be mounted on the printed wiring board 14 easilyand certainly. With the TCP 1A of this embodiment according to thepresent invention, moreover, a stacked module is readily accomplishableby changing the bending shapes of the outer lead portions 5 b formounting purposes as shown in FIG. 17.

In addition to the case where one TCP 1A or TCPs in the stacked form aremounted on such a printed wiring board 14 at the final assembling step,the TCP may be applied to cases, where as shown in FIG. 18, a long tapeis wound as it is on a reel and conveyed to another assembling line inwhich insulating tapes 4 and leads 5 are cut/removed, if necessary, soas to be mounted on printed wiring boards and where as shown in FIG. 19,the insulating tape 4 is cut to a size simultaneously with the provisionof a protective plastic frame 16 around the insulating tape and conveyedto another assembling line in which unnecessary portions of theinsulating tape 4 and the leads 5 as well as the protective film 16 arecut/removed so that the TCP is mounted on a printed wiring board.

In the TCP 1A of this embodiment according to the present invention, itis not always necessary that the number of dummy leads 5 is equal to thenumber of leads 5 to be connected to the bonding pads 6 a (effectivepins) but it may be acceptable that the number of dummy leads 5 is equalto the number of bonding pads 6 a (two), for example, as shown in FIG.20. In this case, each dummy lead 5 is provided with the outer leadportions 5 b to ensure that mounted on the printed wiring board 14 isfacilitated. Notwithstanding, the thermal resistance of a package ismade reducible by increasing the number of leads 5 because the number ofheat radiating channels from the package to the printed wiring board 14is increased.

Further, the TCP 1A of this embodiment according to the presentinvention is also applicable to cases where as shown in FIG. 22, thebonding pads (effective pins 6 a are disposed in part of the area on oneside of the semiconductor chip 2, where as shown in FIG. 22, the bondingpads (effective pins) 6 a are disposed in a row along the centerline ofthe semiconductor chip 2, where as shown in FIG. 23, the bonding pads(effective pins) 6 a are disposed in a row near the intermediateposition between the periphery and centerline of the semiconductor chip2 and where as shown in FIG. 24, some bonding pads (effective pins) 6 aare also disposed on the short sides of the semiconductor chip 2, thatis, the bonding pads (effective pins) 6 a are disposed on the threesides of the semiconductor chip 2.

Further, the number of dummy pads 6 b to be formed on the semiconductorchip 2 is not limited to two and the positions where they are arrangedare not also limited to the corner portions. As shown in FIG. 25, forexample, only one dummy pad 6 b may be formed near the intermediateposition of the side opposite to the side on which the bonding pads(effective pins) 6 a are disposed, or more than two dummy pads 6 b maybe disposed on condition that an area large enough for the dummy pads 6b to be disposed is available on the major surface of the semiconductorchip 2.

Embodiment 2

FIG. 26 is a plan view of a TCP 1B of this embodiment according to thepresent invention. The feature of the TCP 1B is that all dummy leadswhich are formed along a side (a long side on the left-hand side of FIG.26) on which bonding pads (effective pins) 6 a are disposed have innerlead portions 5 a together with outer lead portions 5 b, respectively.Of these dummy leads 5, the leads 5 near the respective dummy pads 6 b(two leads 5 positioned at the respective ends of a dummy lead array)formed on the major surface of a semiconductor chip 2 are such thatthough their inner lead portions 5 a are joined to respective dummy pads6 b and used to support the semiconductor chip 2, the inner leadportions 5 a of the other leads 5 whose leading ends are extended overthe semiconductor chip 2 are not used to support the semiconductor chip2.

With the TCP 1B thus structured of this embodiment according to thepresent invention, as the inner lead portions 5 a are disposed atpredetermined intervals above the gaps between the semiconductor chip 2and an insulating tape 4 in areas along the two opposed long sides ofthe semiconductor chip 2, a potting resin 3 is never allowed topenetrate through the gaps and excessively go around the side face ofthe semiconductor chip 2 even when the potting resin 3 is applied to themajor surface of the semiconductor chip 2 at the step ofresin-encapsulating the semiconductor chip 2 (see FIG. 9).

In the case where the inner lead portion 5 a is provided at both ends ofthe dummy lead array as in the TCP 1A of the preceding embodimentaccording to the present invention (see FIG. 4), the potting resin 3 isallowed to penetrate through the gap in the area along one of the longsides (long right-hand side of FIG. 9) of the semiconductor chip 2 andexcessively go around the side face thereof. Consequently, part of thegap in that area does not become filled with the resin as shown in FIG.27.

Since the aforementioned drawback is made avoidable and the workabilityat the resin-encapsulating step is made also improvable by the TCP 1B ofthis embodiment according to the present invention, it is possible toimprove the throughput and yield of the TCP 1B. The pitch of theabove-described inner lead portions 5 a is preferably set not greaterthan half the inner diameter of the nozzle of a dispenser 13 to be usedwhen the potting resin 3 is applied.

In the TCP 1B shown in FIG. 28 of this embodiment according to thepresent invention, dummy inner lead portions 5 a are disposed even inareas along the other two sides (upper and lower sides) of thesemiconductor chip 2. The inner lead portion 5 a provided in this areais formed by branching part of the inner lead portion 5 a connected to,for example, the dummy pad 6 b. In this case, the inner lead portions 5a are disposed in the areas along all sides of the semiconductor chip 2in the TCP 1B to ensure that the drawback that the gaps between theinsulating tape 4 and the semiconductor chip 2 cannot be filled with theresin becomes preventable.

Embodiment 3

FIGS. 29 and 30 are plan views of an IC card mounted with a TCP 1A ofthe embodiment 1 of the present invention (or a TCP 1B of the embodiment1 of the present invention); and FIG. 30 a sectional view of the ICcard. FIG. 29(a) is an external view of the front side of the IC card,and FIG. 29(b) shows a mounting portion on the front side thereof. FIG.30(a) is an external view of the back side of the IC card, and FIG.30(b) shows a mounting portion on the back side thereof.

The external dimensions of the IC card are, for example,length×width×thickness=36.4 mm×42.8 mm×3.3 mm and has a built-in printedwiring board 20 on which a TCP is mounted. As shown in FIGS. 29(b) and31, the TCP 1A of Embodiment 1 according to the present invention and aTSOP (Thin Small Outline Package) are mounted on the front side of theprinted wiring board 20. The TCP 1A has a two-stage stacked structure asshown in FIG. 17, for example. Moreover, a semiconductor chip forming aDRAM (Dynamic Random Access Memory), for example, is sealed in the TSOP.

As shown in FIG. 30(b) and FIG. 31, further, two semiconductor chips 21,22 of a COB (Chip on Board) system are mounted on the back side of theprinted wiring board 20. A microcomputer, for example is formed in onesemiconductor chip 21, whereas an ASIC (Application Specific IntegratedCircuit), for example, a gate array is formed in the other semiconductorchip 22. The semiconductor chips 21, 22 are separated from each other bya dam frame 24 which is filled with silicone resin 23.

The TCP 1A and the TSOP are both simultaneously mounted on the surfaceof the printed wiring board 20 by a solder reflow method. Further, thesemiconductor chips 21, 22 are joined with an adhesive to the back sideof the printed wiring board 20 fitted with the dam frame 24,electrically connected to the printed wiring board 20 by the wirebonding method and then encapsulated with silicone resin 23.

Since the TCP 1A which is thinner than any other LSI package is mountedon the semiconductor chip used to form a flash memory of this embodimentaccording to the present invention, the memory capacity of the IC cardcan be increased.

Although a description has been given of the invention made by thepresent inventors on the basis of the above-described embodimentsthereof, the present invention is not limited to the above-describedembodiments thereof but may needless to say be modified in variousmanners without departing from the gist of the invention.

In the TCP according to the present invention, part of the bonding pads(effective pins) formed on the semiconductor chip, for example, GND pads(GND pin) and the like may simultaneously be used as dummy pads.

The present invention is applicable to not only a TCP in which asemiconductor chip is encapsulated with bonding resin but also a TCPsuch that a semiconductor chip is encapsulated with molding resin. Inother words, according to the present invention, the displacement of asemiconductor chip due to the flow of the molten resin injected into amolding die is preventable.

The present invention is also applicable to a TCP fabricated by such amethod for forming bump electrodes on inner lead portions using atransfer method.

The present invention is further applicable to not only a flash memorybut also a TCP where a semiconductor chip forming a memory LSI, amicrocomputer, a logic LSI or the like is mounted. The present inventionis applicable to a TCP where a semiconductor chip in which at leastbonding pads are disposed so that they are unevenly arranged in aspecific area of the major surface of the semiconductor chip is mounted.

A brief description will be subsequently given of the effect achievableby exemplary TCPs as disclosed in the present application.

The thickness of the TCP for the semiconductor chip of the one-side padarranging system is made uniform, improving the yield of the TCPaccording to the present invention.

The workability of assembling the TCP for the semiconductor chip of theone-side pad arranging system is improvable according to the presentinvention.

Since the semiconductor chip of the one-side pad arranging system thathas been difficult to mount in the TCP is readily mounted therein, arange of semiconductor products employing the TCP can be widenedaccording to the present invention.

The drawback that the gap between the insulating tape and thesemiconductor chip is left unfilled is reliably prevented, improving thereliability and yield of the TCP according to the present invention.

The memory capacity of the thin semiconductor device such an IC card canbe increased according to the present invention.

What is claimed is:
 1. A semiconductor device comprising: (1) asubstrate having a plurality of electrode pads on one surface thereof;(2) a first device mounted on said one surface of said substrate; and(3) a second device mounted on said one surface of said substrate andstacked over said first device, each of said first and second devicescomprising: (a) an insulating tape having a hole of rectangular shape,said hole being defined by a pair of opposed longer side ends extendingin a first direction and a pair of opposed shorter side ends extendingin a second direction substantially perpendicular to said firstdirection; (b) a semiconductor chip having a main surface of arectangular shape, said main surface having a pair of opposed longeredges extending in said first direction and a pair of opposed shorteredges extending in said second direction, said semiconductor chip beingdisposed in said hole of said insulating tape; said semiconductor chiphaving: an integrated circuit having a plurality of semiconductorelements, being formed on said main surface; first bonding pads beingformed on said main surface and being arranged along one of said pair ofopposed longer edges of said main surface of said semiconductor ship andbeing electrically connected with said integrated circuit, said firstbonding pads being arranged at a first interval in said first direction;(c) first leads disposed on said insulating tape and extending in saidsecond direction, said first leads crossing one of said pair of opposedlonger side ends of said insulating tape and said one of said pair ofopposed longer edges of said main surface of said semiconductor chip,and having one end disposed on said main surface of said semiconductorchip; (d) second leads disposed on said insulating tape and extending insaid second direction, said second leads crossing the other of said pairof opposed longer side ends and the other of said pair of opposed longeredges of said main surface of said semiconductor chip, and having oneend disposed on said main surface of said semiconductor chip; and (e) aresin member sealing said main surface of said semiconductor chip, saidone end of said first and second leads and a space defined by saidsemiconductor chip and said insulating tape in a plane view, whereinsaid one ends of said first leads are connected to said first bondingpads via first bump electrodes, wherein said second leads are leadswhich are not electrically connected to said integrated circuit of saidsemiconductor chip, wherein a portion of said resin member extends ontosaid second leads at said space defined by said semiconductor chip andsaid insulating tape, wherein the other ends of said first and secondleads of each of said first and second devices are connected to thecorresponding electrode pads of said substrate, and wherein said firstand second devices are mounted on said substrate such that said mainsurface of said semiconductor chip of each of said first and seconddevices is faced to said one surface of said substrate and a rearsurface of said semiconductor chip of said first device is close to saidmain surface of said semiconductor chip of said second device.
 2. Asemiconductor device according to claim 1, wherein said resin memberdoes not reach said rear surface of said semiconductor chip of each ofsaid first and second devices.
 3. A semiconductor device according toclaim 1, wherein said resin member includes a potting resin applied by adispenser.
 4. A semiconductor device according to claim 2, wherein saidresin member is terminated to a side surface of said semiconductor chipof each of said first and second devices.
 5. A semiconductor deviceaccording to claim 4, wherein said semiconductor chip of each of saidfirst and second devices further includes second bonding pads which areformed on said main surface thereof and are arranged along the other ofsaid pair of opposed longer edges of said main surface of saidsemiconductor chip and are not electrically connected with saidintegrated circuit, and wherein ones of said second leads of each ofsaid first and second devices are connected to said second bonding padsrespectively.
 6. A semiconductor device according to claim 5, whereinsaid first bonding pads are arranged at a first interval in said firstdirection, and said second bonding pads are arranged at a secondinterval in said first direction, and wherein said second interval iswider than said first interval.
 7. A semiconductor device according toclaim 6, wherein said one end of said second leads are connected to saidsecond bonding pads via second bump electrodes.
 8. A semiconductordevice according to claim 7, further comprising third leads disposed onsaid insulating tape of each of said first and second devices, whereinsaid third leads cross said pair of opposed shorter side ends of saidinsulating tape and said pair of longer sides of said main surface ofsaid semiconductor chip, and have one end disposed on said main surfaceof said semiconductor chip, and wherein a portion of said resin memberextends on said third leads at said space defined by said semiconductorchip and said insulating tape.
 9. A semiconductor device according toclaim 8, wherein said third leads are continuously formed with saidsecond leads on said insulating tape.